GSM4599W datasheet, подбор замены

 ..1. Size:1497K  globaltech semi
 gsm4599w.pdf 

GSM4599W 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4599W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 40V/8A,RDS(ON)=22m @VGS=10V provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)=28m @VGS=4.5V P-Channel These devices are particularly suited for low -40V/-7.2A,RDS(ON)=42m @VGS=-10V volt

 7.1. Size:1577K  globaltech semi
 gsm4599.pdf 

GSM4599 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4599, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 40V/8A,RDS(ON)=22m @VGS=10V provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)=36m @VGS=4.5V P-Channel These devices are particularly suited for low -40V/-7.2A,RDS(ON)=37m @VGS=-10V voltage power m

 9.1. Size:1190K  globaltech semi
 gsm4516w.pdf 

GSM4516W 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m @VGS=-10V voltag

 9.2. Size:1207K  globaltech semi
 gsm4559.pdf 

GSM4559 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4559, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 60V/6.8A,RDS(ON)=42m @VGS=10V provide excellent RDS(ON), low gate charge. 60V/5.6A,RDS(ON)=50m @VGS=4.5V P-Channel These devices are particularly suited for low -60V/-4.0A,RDS(ON)=100m @VGS=-10V v

 9.3. Size:1304K  globaltech semi
 gsm4516.pdf 

GSM4516 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m @VGS=-10V voltage power man

 9.4. Size:1077K  globaltech semi
 gsm4510s.pdf 

GSM4510S 100V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 100V/6.8A,RDS(ON)=150m @VGS=10V provide excellent RDS(ON), low gate charge. 100V/5.6A,RDS(ON)=165m @VGS=4.5V P-Channel These devices are particularly suited for low -100V/-6.2A,RDS(ON)=198m @VGS=

 9.5. Size:1224K  globaltech semi
 gsm4535.pdf 

40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m @VGS= -10V MOSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt

 9.6. Size:1320K  globaltech semi
 gsm4539ws.pdf 

GSM4539WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=36m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=62m @VGS=-10V

 9.7. Size:430K  globaltech semi
 gsm4546.pdf 

GSM4546 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4546, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/5.6A,RDS(ON)=70m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.8. Size:1190K  globaltech semi
 gsm4535w.pdf 

GSM4535W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535W, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m @VGS= -10V OSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 9.9. Size:1320K  globaltech semi
 gsm4539s.pdf 

GSM4539S 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=40m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=65m @VGS=-10V