GSM4822S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: GSM4822S
Маркировка: 4822S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 8 nC
trⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 75 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: SOP-8
GSM4822S Datasheet (PDF)
gsm4822s.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
gsm4822ws.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=44m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe
gsm4896.pdf
GSM4896 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4896, N-Channel enhancement mode 100V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/5.6A,RDS(ON)=125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo
gsm4804.pdf
40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/10A,RDS(ON)= 70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
gsm4850ws.pdf
GSM4850WS 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4850WS, N-Channel enhancement mode 60V/8.5A,RDS(ON)=22m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/7.2A,RDS(ON)=24m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm4874ws.pdf
GSM4874WS 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4874WS, N-Channel enhancement mode 60V/12A,RDS(ON)=11m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/10A,RDS(ON)=15m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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