GSM4936S datasheet, подбор замены

 ..1. Size:1059K  globaltech semi
 gsm4936s.pdf 

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4936S, N-Channel enhancement mode 30V/5.8A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.5A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 7.1. Size:1070K  globaltech semi
 gsm4936ws.pdf 

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4936WS, N-Channel enhancement mode 30V/5.8A,RDS(ON)=36m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.5A,RDS(ON)=46m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices areW particularly suited for low low RDS (ON) voltage pow

 9.1. Size:939K  globaltech semi
 gsm4998.pdf 

GSM4998 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=145m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo

 9.2. Size:438K  globaltech semi
 gsm4953s.pdf 

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=52m @VGS= -10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m @VGS= - 4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt

 9.3. Size:1468K  globaltech semi
 gsm4924.pdf 

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 24m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)= 48m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma

 9.4. Size:834K  globaltech semi
 gsm4925ws.pdf 

GSM4925WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925WS, P-Channel enhancement mode -30V/-8.0A,RDS(ON)= 18m @VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite

 9.5. Size:731K  globaltech semi
 gsm4906.pdf 

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4906, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/5.6A,RDS(ON)=70m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.6. Size:719K  globaltech semi
 gsm4925.pdf 

GSM4925 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 28m @VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 37m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

 9.7. Size:438K  globaltech semi
 gsm4946.pdf 

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.8. Size:859K  globaltech semi
 gsm4900w.pdf 

GSM4900W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4900W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=115m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=140m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.9. Size:916K  globaltech semi
 gsm4998w.pdf 

GSM4998W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.2A,RDS(ON)=130m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.10. Size:801K  globaltech semi
 gsm4997.pdf 

GSM4997 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench Technology to 90V/5.6A,RDS(ON)=75m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.11. Size:1478K  globaltech semi
 gsm4924w.pdf 

GSM4924W 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924W, N-Channel enhancement mode 40V/8A,RDS(ON)=22m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)=28m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S

 9.12. Size:432K  globaltech semi
 gsm4946w.pdf 

 9.13. Size:944K  globaltech semi
 gsm4953ws.pdf 

GSM4953WS GSM4953WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4953WS, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=60m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=80m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particula

 9.14. Size:833K  globaltech semi
 gsm4925s.pdf 

GSM4925S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925S, P-Channel enhancement mode -30V/-7.5A,RDS(ON)= 18m @VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 9.15. Size:408K  globaltech semi
 gsm4946bw.pdf 

GSM4946BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=65m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.16. Size:823K  globaltech semi
 gsm4925w.pdf 

GSM4925W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925W, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 30m @VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 36m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 9.17. Size:830K  globaltech semi
 gsm4948.pdf 

GSM4948 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM4948, P-Channel enhancement mode -60V/-4.0A,RDS(ON)= 100m @VGS= -10V OSFET, uses Advanced Trench Technology to -60V/-3.0A,RDS(ON)= 120m @VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 9.18. Size:846K  globaltech semi
 gsm4922w.pdf 

GSM4922W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4922W, N-Channel enhancement mode 100V/2.0A,RDS(ON)=290m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.5A,RDS(ON)=300m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.19. Size:831K  globaltech semi
 gsm4996.pdf 

GSM4996 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench Technology to 90V/6.8A,RDS(ON)=75m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low