GSM9575S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: GSM9575S
Маркировка: 9575S
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 40 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 25 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 140 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.068 Ohm
Тип корпуса: TO-252
GSM9575S Datasheet (PDF)
gsm9575s.pdf
GSM9575S 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)=68m@VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-12A,RDS(ON)=78m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l
gsm9576.pdf
GSM9576 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM9576, P-Channel enhancement mode -60V/-14A,RDS(ON)=115m@VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-10A,RDS(ON)=125m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l
gsm9510s.pdf
GSM9510S 100V P-Channel Enhancement Mode MOSFET Product Description Features GSM9510S, P-Channel enhancement mode -100V/-8.0A,RDS(ON)=200m@VGS=-10V MOSFET, uses Advanced Trench Technology to -100V/-7.0A,RDS(ON)=220m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite
gsm9566w.pdf
GSM9566W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)=80m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.5A,RDS(ON)=105m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo
gsm9565s.pdf
GSM9565S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM9565S, P-Channel enhancement mode -40V/-8.6A,RDS(ON)=58m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-6.2A,RDS(ON)=86m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
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