CPH3430 - описание и поиск аналогов

Ordering number ENN8175 CPH3430 N-Channel Silicon MOSFET General-Purpose Switching Device CPH3430 Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 2 A D

CPH3448 Ordering number ENA1648 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH3448 Applications Features 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 12 V Drain Current (DC) I

Ordering number EN5985 N-Channel MOS Silicon FET CPH3403 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152 2.5V drive. [CPH3403] 2.9 0.15 0.4 3 0 to 0.1 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions

Ordering number ENN7123 CPH3409 N-Channel Silicon MOSFET CPH3409 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3409] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond

CPH3457 Ordering number ENA1804 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH3457 Applications Features ON-resistance RDS(on)1=73m (typ.) 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Sour

Ordering number ENN6924 CPH3413 N-Channel Silicon MOSFET CPH3413 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3413] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain Specifications SANYO CPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond

Ordering number ENN7124 CPH3417 N-Channel Silicon MOSFET CPH3417 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 1.8V drive. [CPH3417] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond

Ordering number ENN6416 N-Channel Silicon MOSFET CPH3405 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3405] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rati

Ordering number ENA0094 CPH3442 N-Channel Silicon MOSFET General-Purpose Switching Device CPH3442 Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 6.5 A

Ordering number ENN6998 CPH3408 N-Channel Silicon MOSFET CPH3408 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3408] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol C

Ordering number ENN6417 N-Channel Silicon MOSFET CPH3406 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3406] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rati

CPH3455 Ordering number EN8737 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH3455 Applications Features ON-resistance RDS(on)1=80m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source

Ordering number ENN6862 CPH3414 N-Channel Silicon MOSFET CPH3414 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3414] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain Specifications SANYO CPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condit

Ordering number ENN6997 CPH3407 N-Channel Silicon MOSFET CPH3407 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3407] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condi

Ordering number ENN6777 CPH3410 N-Channel Silicon MOSFET CPH3410 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3410] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain Specifications SANYO CPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond

CPH3456 Ordering number ENA1803 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH3456 Applications Features ON-resistance RDS(on)1=54m (typ.) 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Sour

Ordering number ENN7917 CPH3427 N-Channel Silicon MOSFET General-Purpose Switching Device CPH3427 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 1 A Dra

CPH3461 Power MOSFET www.onsemi.com 250V, 6.5 , 350mA, Single N-Channel Features On-Resistance RDS(on)1=5 (typ) ESD Diode - Protected Gate 2.5V Drive Low Ciss and High Speed Switching Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 25

Ordering number ENA2301A CPH3459 Power MOSFET http //onsemi.com 200V, 3.7 , 0.5A, Single N-Channel Features On-resistance RDS(on)1=2.8 (typ) Input Capacitance Ciss=90pF (typ) 4V drive Protection Diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage V

Ordering number ENA2322A CPH3462 Power MOSFET http //onsemi.com 100V, 785m , 1A, Single N-Channel Features On-resistance RDS(on)1=590m (typ) Halogen free compliance 4V drive Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS 20 V Drain Current

CPH3456 Power MOSFET www.onsemi.com 20V, 71m , 3.5A, Single N-Channel VDSS RDS(on) Max ID Max Features 71 m @4.5V ON-Resistance RDS(on)1=54m (typ) 20V 103 m @2.5V 3.5A 1.8V Drive 156 m @1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25 C Unit Parameter Symbol

CPH3427-TL www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.240 at VGS = 10 V 2.0 Material categorization 0.250 at VGS = 6 V 100 1.8 2.9 nC 0.260 at VGS = 4.5 V 1.7 APPLICATIONS DC/DC Converters Load Switch LED Backlight