CPH6411 - описание и поиск аналогов

Ordering number ENN7383 CPH6411 N-Channl Silicon MOSFET CPH6411 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2151A 2.5V drive. [CPH6411] 0.15 2.9 5 6 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain SANYO CPH6 Specifications Absolute Maximum

Ordering number EN5983 N-Channel MOS Silicon FET CPH6402 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2151 4V drive. [CPH6402] 0.15 2.9 6 5 4 0 to 0.1 1 Drain 1 2 3 2 Drain 0.95 3 Gate 4 Source 5 Drain 6 Drain 0.4 SANYO CPH6 Specifications Absolute Maximum Ratings at T

Ordering number ENN6152A N-Channel Silicon MOSFET CPH6401 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2151A 2.5V drive. [CPH6401] 0.15 2.9 6 5 4 0.05 1 2 3 1 Drain 0.95 2 Drain 3 Gate 4 Source 5 Drain 6 Drain 0.4 SANYO CPH6 Specifications Absolute Maximum Ratings at T

CPH6445 Ordering number ENA1532 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH6445 Applications Features Low ON-resistance. 4V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 3.5

Ordering number ENA1243A CPH6444 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH6444 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 4.5 A

Ordering number ENN8081 CPH6429 N-Channel Silicon MOSFET CPH6429 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 2 A Drain Curr

Ordering number ENN6338 N-Channel Silicon MOSFET CPH6404 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2151A 4V drive. [CPH6404] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain SANYO CPH6 Specifications Absolute Maximum Ratings at Ta =

CPH6443 Ordering number ENA1826 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH6443 Applications Features ON-resistance RDS(on)1=28m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source

Ordering number ENN5990B N-Channel Silicon MOSFET CPH6403 Load Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2151A 2.5V drive. [CPH6403] 0.15 2.9 6 5 4 0.05 1 2 3 1 Drain 0.95 2 Drain 3 Gate 4 Source 5 Drain 6 Drain 0.4 SANYO CPH6 Specifications Absolute Maximum Ratings at Ta = 25 C P

Ordering number ENN6418 N-Channel Silicon MOSFET CPH6406 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2151A 4V drive. [CPH6406] 0.15 2.9 5 6 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain Specifications SANYO CPH6 Absolute Maximum Ratings at Ta =

Ordering number ENA0443 CPH6434 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH6434 Applications Features Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC)

Ordering number ENA1242 CPH6442 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH6442 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 6 A Dr