NDD03N40Z datasheet, аналоги, основные параметры

Наименование производителя: NDD03N40Z

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 37 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 17 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3.4 Ohm

Тип корпуса: DPAK IPAK

Аналог (замена) для NDD03N40Z

- подборⓘ MOSFET транзистора по параметрам

 

NDD03N40Z даташит

 ..1. Size:118K  onsemi
ndd03n40z.pdfpdf_icon

NDD03N40Z

NDD03N40Z, NDT03N40Z N-Channel Power MOSFET 400 V, 3.4 W Features 100% Avalanche Tested Extremely High dv/dt Capability http //onsemi.com Gate Charge Minimized Very Low Intrinsic Capacitance V(BR)DSS RDS(ON) MAX Improved Diode Reverse Recovery Characteristics Zener-protected 400 V 3.4 W @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 8.1. Size:162K  onsemi
ndf03n60z ndp03n60z ndd03n60z.pdfpdf_icon

NDD03N40Z

NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant 600 V 3.3 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF NDP NDD Unit N-Channel D (2) Drain-to-Source V

 8.2. Size:114K  onsemi
ndd03n80z.pdfpdf_icon

NDD03N40Z

NDD03N80Z N Channel Power MOSFET 800 V, 4.5 W Features ESD Diode-Protected Gate 100% Avalanche Tested http //onsemi.com 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX Compliant 800 V 4.5 W @ 10 V ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol Value Unit N-Channel Drain-to-Source Volta

 8.3. Size:119K  onsemi
ndd03n50z.pdfpdf_icon

NDD03N40Z

NDD03N50Z N-Channel Power MOSFET 500 V, 3.3 W Features Low ON Resistance Low Gate Charge http //onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(on) (MAX) @ 1.15 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 500 V 3.3 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Rating Symbol Value Unit

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