NDS8410 datasheet, подбор замены

 ..1. Size:109K  fairchild semi
 nds8410.pdf 

February 1996 NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features 10A, 30V. RDS(ON) = 0.015 @ VGS = 10V These N-Channel enhancement mode power field effect RDS(ON) = 0.020 @ VGS = 4.5V. transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design

 0.1. Size:186K  fairchild semi
 nds8410a.pdf 

October 2004 NDS8410A Single 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET are produced using 10.8 A, 30 V RDS(ON) = 12 m @ VGS = 10 V Fairchild s proprietary, high cell density, DMOS RDS(ON) = 17 m @ VGS = 4.5 V technology. This very high density process is especially tailored to minimize on-state resistance and Ultra-low gate ch

 9.1. Size:198K  fairchild semi
 nds8434.pdf 

June 1996 NDS8434 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -6.5A, -20V. RDS(ON) = 0.035 @ VGS = -4.5V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = -2.7V. density, DMOS technology. This very high density process is High density cell design fo

 9.2. Size:197K  fairchild semi
 nds8435a.pdf 

March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -7.9 A, -30 V. RDS(ON) = 0.023 @ VGS = -10 V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.035 @ VGS = -4.5V. density, DMOS technology. This very high density process is High density cell

 9.3. Size:104K  fairchild semi
 nds8425.pdf 

January 2001 NDS8425 Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced 7.4 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 V using Fairchild Semiconductor s advanced Power RDS(ON) = 0.028 @ VGS = 2.7 V Trench process that has been especially tailored to minimize on-state resistance and

 9.4. Size:310K  onsemi
 nds8434.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.5. Size:1458K  cn vbsemi
 nds8434a.pdf 

NDS8434A www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical

 9.6. Size:1435K  cn vbsemi
 nds8435a.pdf 

NDS8435A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D

 9.7. Size:823K  cn vbsemi
 nds8425.pdf 

NDS8425 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-