NP109N04PUK datasheet, аналоги, основные параметры

Наименование производителя: NP109N04PUK

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 250 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 16 ns

Cossⓘ - Выходная емкость: 1040 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.00175 Ohm

Тип корпуса: TO-263

Аналог (замена) для NP109N04PUK

- подборⓘ MOSFET транзистора по параметрам

 

NP109N04PUK даташит

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NP109N04PUK

Preliminary Data Sheet R07DS0544EJ0100 NP109N04PUK Rev.1.00 Sep 23, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss Ciss = 7200 pF TYP. (VDS = 25 V) Designed for

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NP109N04PUK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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NP109N04PUK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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NP109N04PUK

Preliminary Data Sheet NP109N055PUK R07DS0590EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 12, 2011 Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss Ciss = 7500 pF TYP. (VDS = 25 V) Designed for

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