Справочник MOSFET. NP109N055PUJ

 

NP109N055PUJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NP109N055PUJ
   Маркировка: 109N055UJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 115 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 760 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для NP109N055PUJ

 

 

NP109N055PUJ Datasheet (PDF)

 ..1. Size:310K  renesas
np109n055puj.pdf

NP109N055PUJ NP109N055PUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 3.1. Size:100K  renesas
np109n055puk.pdf

NP109N055PUJ NP109N055PUJ

Preliminary Data Sheet NP109N055PUK R07DS0590EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.2 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) Designed for

 7.1. Size:227K  renesas
np109n04puk.pdf

NP109N055PUJ NP109N055PUJ

Preliminary Data Sheet R07DS0544EJ0100NP109N04PUK Rev.1.00Sep 23, 2011MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 7200 pF TYP. (VDS = 25 V) Designed for

 7.2. Size:284K  renesas
np109n04pug.pdf

NP109N055PUJ NP109N055PUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.3. Size:310K  renesas
np109n04puj.pdf

NP109N055PUJ NP109N055PUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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