Справочник MOSFET. NP110N04PUG

 

NP110N04PUG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NP110N04PUG
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 288 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 110 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 260 nC
   Время нарастания (tr): 140 ns
   Выходная емкость (Cd): 1420 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0018 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для NP110N04PUG

 

 

NP110N04PUG Datasheet (PDF)

 ..1. Size:263K  renesas
 np110n04pug.pdf

NP110N04PUG NP110N04PUG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.1. Size:310K  renesas
 np110n04puj.pdf

NP110N04PUG NP110N04PUG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.2. Size:104K  renesas
 np110n04puk.pdf

NP110N04PUG NP110N04PUG

Preliminary Data Sheet NP110N04PUK R07DS0570EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 17, 2011Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.4 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) Designed for a

 5.1. Size:243K  renesas
 np110n04pdg.pdf

NP110N04PUG NP110N04PUG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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