Справочник MOSFET. NP110N04PUJ

 

NP110N04PUJ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NP110N04PUJ
   Маркировка: 110N04UJ
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 288 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 150 nC
   tr ⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 1250 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для NP110N04PUJ

   - подбор ⓘ MOSFET транзистора по параметрам

 

NP110N04PUJ Datasheet (PDF)

 ..1. Size:310K  renesas
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NP110N04PUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.1. Size:263K  renesas
 np110n04pug.pdf pdf_icon

NP110N04PUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.2. Size:104K  renesas
 np110n04puk.pdf pdf_icon

NP110N04PUJ

Preliminary Data Sheet NP110N04PUK R07DS0570EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 17, 2011Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.4 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) Designed for a

 5.1. Size:243K  renesas
 np110n04pdg.pdf pdf_icon

NP110N04PUJ

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NP109N04PUG , NP109N04PUJ , NP109N04PUK , NP109N055PUJ , NP109N055PUK , NP110N03PUG , NP110N04PDG , NP110N04PUG , AO3400 , NP110N04PUK , NP110N055PUG , NP110N055PUJ , NP110N055PUK , NP15P04SLG , NP15P06SLG , NP160N04TDG , NP160N04TUG .

History: SWP3205 | ISCPL322D | NTR4170NT1G | 2SK1582 | KML0D4N20TV

 

 
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