Справочник MOSFET. NP110N055PUG

 

NP110N055PUG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NP110N055PUG
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 288 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 251 nC
   tr ⓘ - Время нарастания: 201 ns
   Cossⓘ - Выходная емкость: 1120 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для NP110N055PUG

   - подбор ⓘ MOSFET транзистора по параметрам

 

NP110N055PUG Datasheet (PDF)

 ..1. Size:268K  renesas
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NP110N055PUG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 3.1. Size:311K  renesas
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NP110N055PUG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 3.2. Size:101K  renesas
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NP110N055PUG

Preliminary Data Sheet NP110N055PUK R07DS0591EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) Designed fo

 7.1. Size:243K  renesas
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NP110N055PUG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие MOSFET... NP109N04PUK , NP109N055PUJ , NP109N055PUK , NP110N03PUG , NP110N04PDG , NP110N04PUG , NP110N04PUJ , NP110N04PUK , 8205A , NP110N055PUJ , NP110N055PUK , NP15P04SLG , NP15P06SLG , NP160N04TDG , NP160N04TUG , NP160N04TUJ , NP160N04TUK .

History: RU40190Q2 | ISL9N308AD3 | NTR1P02L | SIS330DN | IRL3715S

 

 
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