NP110N055PUG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NP110N055PUG
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 288 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 110 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 251 nC
Время нарастания (tr): 201 ns
Выходная емкость (Cd): 1120 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0024 Ohm
Тип корпуса: TO-263
Аналог (замена) для NP110N055PUG
NP110N055PUG Datasheet (PDF)
np110n055pug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np110n055puj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np110n055puk.pdf
Preliminary Data Sheet NP110N055PUK R07DS0591EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) Designed fo
np110n04pdg.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np110n04pug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np110n04puj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np110n04puk.pdf
Preliminary Data Sheet NP110N04PUK R07DS0570EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 17, 2011Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.4 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) Designed for a
np110n03pug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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