NP180N055TUJ datasheet, аналоги, основные параметры
Наименование производителя: NP180N055TUJ
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 348 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 1060 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
Тип корпуса: TO-263-7
Аналог (замена) для NP180N055TUJ
- подборⓘ MOSFET транзистора по параметрам
NP180N055TUJ даташит
np180n055tuj.pdf
Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 22, 2010 Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.3 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut
np180n055tuk.pdf
Preliminary Data Sheet NP180N055TUK R07DS0593EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 12, 2011 Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.40 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss Ciss = 10700 pF TYP. (VDS = 25 V) Designed fo
np180n04tuj.pdf
Preliminary Data Sheet R07DS0180EJ0100 NP180N04TUJ Rev.1.00 Dec 17, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 1.5 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut
np180n04tug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие IGBT... NP160N055TUJ, NP160N055TUK, NP161N04TUG, NP16N04YUG, NP16N06YLL, NP180N04TUG, NP180N04TUJ, NP180N04TUK, IRFP450, NP180N055TUK, NP20N10YDF, NP20P04SLG, NP20P06SLG, NP20P06YLG, NP22N055HHE, NP22N055HLE, NP22N055IHE
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: RM50P30DF | CRTT095N12N | CRSS028N10N | CRST030N10N | CRJQ80N65F | ASDM20N20KQ | ASDM20N100Q | ASDM12N65F | ASDM100R750PKQ | ASDM100R160NKQ | ASDM100R090NP | ASDM100R066NQ | ASDM100R045NQ | ASDM100N34KQ | ASDM100N15KQ | FTF30P35D
Popular searches
2n554 | 2sa1011 | 2sa1283 | 2sb646 | 2sc1885 datasheet | 2sc2580 | 2sc710 | 2sc968





