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NP40N055DLE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NP40N055DLE
   Маркировка: 40N055LE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 66 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 27 nC
   trⓘ - Время нарастания: 8.4 ns
   Cossⓘ - Выходная емкость: 190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
   Тип корпуса: TO-262

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NP40N055DLE Datasheet (PDF)

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 np40n055cle np40n055dle np40n055ele np40n055kle np40n055mle np40n055nle.pdf

NP40N055DLE NP40N055DLE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:291K  renesas
 np40n055che np40n055dhe np40n055ehe np40n055khe np40n055mhe np40n055nhe.pdf

NP40N055DLE NP40N055DLE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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 np40n10pdf np40n10vdf np40n10ydf.pdf

NP40N055DLE NP40N055DLE

Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF R07DS0361EJ0201100 V 40 A N-channel Power MOS FET Rev.2.01Application: Automotive May 13, 2013Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Low on-state resistance RDS(on) = 25 m MAX. (VGS = 10 V, ID = 20 A) (NP40N10Y

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History: 2SK1753

 

 
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