NP40N10PDF datasheet, аналоги, основные параметры

Наименование производителя: NP40N10PDF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 120 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 16 ns

Cossⓘ - Выходная емкость: 200 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm

Тип корпуса: TO-263

Аналог (замена) для NP40N10PDF

- подборⓘ MOSFET транзистора по параметрам

 

NP40N10PDF даташит

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NP40N10PDF

Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF R07DS0361EJ0201 100 V 40 A N-channel Power MOS FET Rev.2.01 Application Automotive May 13, 2013 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Low on-state resistance RDS(on) = 25 m MAX. (VGS = 10 V, ID = 20 A) (NP40N10Y

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NP40N10PDF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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NP40N10PDF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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