NP60N03SUG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NP60N03SUG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 105 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 600 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0038 Ohm
Тип корпуса: TO-252
Аналог (замена) для NP60N03SUG
NP60N03SUG Datasheet (PDF)
np60n03sug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np60n03kug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np60n04kug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np60n055vuk.pdf

Preliminary Data Sheet NP60N055VUK R07DS0588EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.5 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) Designed for au
Другие MOSFET... NP50P06SDG , NP52N055SUG , NP52N06SLG , NP55N03SUG , NP55N04SUG , NP55N055SDG , NP55N055SUG , NP60N03KUG , RFP50N06 , NP60N04HLF , NP60N04ILF , NP60N04KUG , NP60N04MUG , NP60N04MUK , NP60N04NUK , IRL60SL216 , IXFA56N30X3 .
History: IRLIZ44GPBF | STU7N60M2 | TK10A80W | WMJ90R260S | PJM3400NSA | SD8901CY | WNM2072
History: IRLIZ44GPBF | STU7N60M2 | TK10A80W | WMJ90R260S | PJM3400NSA | SD8901CY | WNM2072



Список транзисторов
Обновления
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