NP90N04VDG - описание и поиск аналогов

 ..1. Size:315K  renesas
 np90n04vdg.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:105K  renesas
 np90n04vdk.pdf 

Preliminary Data Sheet NP90N04VDK R07DS1017EJ0100 40 V 90 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 21, 2013 Description The NP90N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF

 6.1. Size:330K  renesas
 np90n04vlg.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.2. Size:311K  renesas
 np90n04vug.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.3. Size:102K  renesas
 np90n04vuk.pdf 

Preliminary Data Sheet NP90N04VUK R07DS0577EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 29, 2011 Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3900 pF TYP. (VDS = 25 V) Designed for auto

 6.4. Size:170K  renesas
 np90n04vlk.pdf 

Preliminary Data Sheet NP90N04VLK R07DS1236EJ0100 40 V 90 A N-channel Power MOS FET Rev.1.00 Application Automotive Nov 10, 2014 Description The NP90N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss Ciss = 3800 pF T