AP9918J - описание и поиск аналогов

AP9918H/J Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A G Surface mount package S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the b

AP9918GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A G Surface mount package S Description G The Advanced Power MOSFETs from APEC provide the D S TO-2

AP9918GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 14m Low drive current ID 45A Surface mount package G S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggediz

AP9915H/J Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D Capable of 2.5V gate drive RDS(ON) 50m Low drive current ID 20A G Single Drive Requirement S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with th

AP9916H/J Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 18V D Capable of 2.5V gate drive RDS(ON) 25m Low drive current ID 35A G Single Drive Requirement S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with th

AP9915GK Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 20V D Lower Gate Charge RDS(ON) 50m Fast Switching Characteristic ID 6.2A S D RoHS Compliant SOT-223 G Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G l

AP9916GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 18V D Capable of 2.5V gate drive RDS(ON) 25m Low drive current ID 35A G Surface mount package S Description G The Advanced Power MOSFETs from APEC provide the D S TO-25