Si4947ADYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.080 at VGS = - 10 V - 3.9 TrenchFET Power MOSFETs - 300.135 at VGS = - 4.5 V - 3.0 Compliant to RoHS Directive 2002/95/ECS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top

Si4947ADYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.080 at VGS = - 10 V - 3.9 TrenchFET Power MOSFETs - 300.135 at VGS = - 4.5 V - 3.0 Compliant to RoHS Directive 2002/95/ECS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top

SI4947ADYwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vi

Si4947DYDual P-Channel 30-V (D-S) Rated MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)0.085 @ VGS = 10 V "3.530300.19 @ VGS = 4.5 V "2.5S1 S2SO-8S1 1 8 D1G1 G2G1 2 7 D1S2 3 6 D2G2 4 5 D2Top ViewD1 D2P-Channel MOSFET P-Channel MOSFETAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitDrain-Source Voltage VDS 3

SI4947DYwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vie

Si4946BEYVishay SiliconixDual N-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.041 at VGS = 10 V 6.5 TrenchFET Power MOSFET60 9.2 nC0.052 at VGS = 4.5 V 5.8 175 C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/9

Si4942DYVishay SiliconixDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.021 at VGS = 10 V 7.4 TrenchFET Power MOSFET400.028 at VGS = 4.5 V 6.4 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Low Power Synchronous Rectifier Automotive 12 V SystemsD1

New ProductSi4943CDYVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.0192 at VGS = - 10 V - 8 TrenchFET Power MOSFET- 20 20 100 % Rg and UIS Tested0.0330 at VGS = - 4.5 V - 8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Si4943BDYVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.019 at VGS = - 10 V - 8.4 TrenchFET Power MOSFET- 200.031 at VGS = - 4.5 V - 6.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switching- Computer- G

Si4948BEYVishay SiliconixDual P-Channel 60-V (D-S) 175 MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.120 at VGS = - 10 V - 3.1- 60 TrenchFET Power MOSFET 0.150 at VGS = - 4.5 V - 2.8 Compliant to RoHS Directive 2002/95/ECS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25

Si4944DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETRoHS0.0095 at VGS = 10 V 12.230 COMPLIANT 100 % Rg Tested 0.016 at VGS = 4.5 V 9.4APPLICATIONS DC/DC Conversion Load SwitchingSO-8D1 D2S1 1 D18G1 2 D17S2 3 D26G1

Si4948EYVishay SiliconixDual P-Channel 60-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.120 at VGS = - 10 V 3.1- 60 TrenchFET Power MOSFETs0.150 at VGS = - 4.5 V 2.8 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECS1 S2SO-8S1 1 D1

Si4946EYVishay SiliconixDual N-Channel 60-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Maximum Junction TemperatureD 100% Rg Tested0.055 @ VGS = 10 V 4.5 Pb-freeAvailable60600.075 @ VGS = 4.5 V 3.9SO-8DS1 1 D18G1 2 D17S2 3 D26GG2 4 D25Top ViewSOrdering Information: Si4946EYSi4946EY-

Si4946BEYVishay SiliconixDual N-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.041 at VGS = 10 V 6.5 TrenchFET Power MOSFET60 9.2 nC0.052 at VGS = 4.5 V 5.8 175 C Maximum Junction Temperature 100 % Rg Tested Compliant to RoHS directive 2002/9

New ProductSi4941EDYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A) Qg (Typ) ESD Protection: 2500 V0.021 at VGS = - 10 V - 10aRoHS- 30 26 nCCOMPLIANTAPPLICATIONS0.031 at VGS = - 4.5 V - 10a Load Switch for Portable Devices Battery and Load Switching for NotebooksD1 D

Si4940DYVishay SiliconixDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.036 at VGS = 10 V 5.7 TrenchFET Power MOSFET 400.059 at VGS = 4.5 V 4.4 Compliant to RoHS Directive 2002/95/ECD1 D2SO-8S1 1 D18G1 2 D17G1 G2S2 3 D26G2 4 D25Top ViewS1 S2

Si4943DYNew ProductVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)APPLICATIONS0.019 @ VGS = -10 V-8.4D Load Switching-20-20- Computer0.030 @ VGS = - 4.5 V -6.7- Game SystemsD Battery Switching- 2-Cell Li-lonS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View

Si4948BEYVishay SiliconixDual P-Channel 60-V (D-S) 175 MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.120 at VGS = - 10 V - 3.1- 60 TrenchFET Power MOSFET 0.150 at VGS = - 4.5 V - 2.8 Compliant to RoHS Directive 2002/95/ECS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25

Si4946CDYwww.vishay.comVishay SiliconixDual N-Channel 60 V (D-S) MOSFETFEATURESSO-8 DualD2 TrenchFET power MOSFETD2 5D1 6 100 % Rg testedD17 Material categorization: 8for definitions of compliance please see www.vishay.com/doc?999124APPLICATIONSG233S2S222 DC/DC converterG1 D1 D2G11 Load switchS1Top View Inve

New ProductSi4943CDYVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.0192 at VGS = - 10 V - 8 TrenchFET Power MOSFET- 20 20 100 % Rg and UIS Tested0.0330 at VGS = - 4.5 V - 8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

SMD Type MOSFETDual N-Channel MOSFETSI4946DY (KI4946DY)SOP-8 Features VDS (V) = 60V1.50 0.15 ID = 6.5 A (VGS = 10V) RDS(ON) 41m (VGS = 10V) RDS(ON) 52m (VGS = 4.5V)1 Source1 5 Drain26 Drain22 Gate1 175 C Maximum Junction Temperature7 Drain13 Source28 Drain14 Gate2D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25

SI4948BEY-T1-E3www.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25

SI4946BEY-T1www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Cha

SI4944DYwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1230 5.9 nC Optimized for High-Side Synchronous0.012 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS