FCPF150N65F - описание и поиск аналогов

May 2016 FCPF150N65F N-Channel SuperFET II FRFET MOSFET 650 V, 24 A, 150 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 133 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 72 nC) a

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FCPF150N65F FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

May 2015 FCPF150N65FL1 N-Channel SuperFET II FRFET MOSFET 650 V, 24 A, 150 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 133 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 72 nC) an

FCPF165N65S3L1 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 165 mW @ 10 V 19 A charge performance. This adv

December 2013 FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 160 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charg

August 2009 SupreMOSTM FCP11N60N / FCPF11N60NT tm N-Channel MOSFET 600V, 10.8A, 0.299 Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC) process that differentiates it from preceding multi-epi

August 2009 SupreMOSTM FCP13N60N / FCPF13N60NT N-Channel MOSFET 600V, 13A, 0.258 Features Description RDS(on) = 0.244 ( Typ.) @ VGS = 10V, ID = 6.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 30.4nC) process that differentiates it from preceding multi-epi based

March 2014 FCP11N60/FCPF11N60 General Description Features SuperFET MOSFET is Fairchild Semiconductor s first 650V @Tj = 150 C genera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32 family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC) outstanding low on-resistance and lower gate charge Low effective outpu

August 2014 FCP16N60 / FCPF16N60 N-Channel SuperFET MOSFET 600 V, 16 A, 260 m Features Description SuperFET MOSFET is Fairchild Semiconductor s first genera- 650V @ TJ = 150 C tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 220 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 55 nC ) r

December 2008 TM SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance

December 2013 FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5

November 2013 FCPF11N60F N-Channel SuperFET FRFET MOSFET 600 V, 11 A, 380 m Features Description 600 V @ TJ = 150 C SuperFET MOSFET is Fairchild Semiconductor s first genera- tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 320 m utilizing charge balance technology for outstanding low on- Fast Recovery Type (trr = 120 ns) resistanc

September 2014 FCPF190N65FL1 N-Channel SuperFET II FRFET MOSFET 650 V, 20.6 A, 190 m Features Description 700 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing RDS(on) = 168 m (Typ.) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =

August 2009 SupreMOSTM FCP16N60N / FCPF16N60NT N-Channel MOSFET 600V, 16A, 0.170 Features Description RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC) process that differentiates it from preceding multi-epi based te

December 2008 TM SuperFET FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on) = 0.22 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfo

December 2008 TM SuperFET FCP11N60/FCPF11N60 General Description Features SuperFETTM is a new generation of high voltage MOSFETs 650V @Tj = 150 C from Fairchild with outstanding low on-resistance and low Typ. Rds(on)=0.32 gate charge performance, a result of proprietary technology Ultra low gate charge (typ. Qg=40nC) utilizing advanced charge balance mechanisms. L

July 2014 FCPF1300N80Z N-Channel SuperFET II MOSFET 800 V, 4 A, 1.3 Features Description RDS(on) = 1.05 Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 16.2 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 1.57

FCPF165N65S3R0L MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailo

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FCPF190N65S3L1 Power MOSFET, N-Channel, SUPERFET) III, Easy Drive, 650 V, 14 A, 190 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailore

FCPF190N65S3R0L Power MOSFET, N-Channel, SUPERFET) III, Easy Drive, 650 V, 17 A, 190 mW Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(on) MAX ID MAX charge performance. This advanced technology is tailor

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FCPF165N65S3L1 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 165 mW @ 10 V 19 A charge performance. This adv

CPF125N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 125 mW @ 10 V 24 A charge performance. This advanc

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

isc N-Channel MOSFET Transistor FCPF190N60 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCPF190N60E FEATURES With TO-220F packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCPF16N60 FEATURES Drain-source on-resistance RDS(on) 0.26 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be suitable for various AC/DC power conversion in switching mode operation for system miniaturization and

isc N-Channel MOSFET Transistor FCPF16N60NT FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc N-Channel MOSFET Transistor FCPF190N65FL1 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc N-Channel MOSFET Transistor FCPF165N65S3L1 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor FCPF125N65S3 FEATURES With To-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

isc N-Channel MOSFET Transistor FCPF1300N80Z FEATURES Drain-source on-resistance RDS(on) 1.3 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC - DC Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 800 V DSS V

isc N-Channel MOSFET Transistor FCPF13N60NT FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc N-Channel MOSFET Transistor FCPF11N60NT FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL