IPA045N10N3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPA045N10N3
Маркировка: 045N10N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 39 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 64 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 88 nC
Время нарастания (tr): 47 ns
Выходная емкость (Cd): 1100 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
Тип корпуса: TO-220FP
Аналог (замена) для IPA045N10N3
IPA045N10N3 Datasheet (PDF)
ipa045n10n3.pdf
isc N-Channel MOSFET Transistor IPA045N10N3,IIPA045N10N3FEATURESLow drain-source on-resistance:RDS(on) 4.5m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
ipa040n08nm5s.pdf
IPA040N08NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 80 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified
ipa040n06nm5s.pdf
IPA040N06NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 60 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified
ipa040n06n.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 60 VIPA040N06NData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 60 VIPA040N06NTO-220-FP1 DescriptionFeatures Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel
ipa041n04ng.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS3 Power-Transistor, 40 VIPA041N04N GData SheetRev. 2.0FinalPower Management & MultimarketOptiMOS3 Power-Transistor, 40 VIPA041N04N GTO-220-FP1 DescriptionFeatures Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel, normal l
ipa040n06n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA040N06NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS
ipa041n04n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA041N04NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS
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