IPA057N08N3 - описание и поиск аналогов

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isc N-Channel MOSFET Transistor IPA057N08N3,IIPA057N08N3 FEATURES Low drain-source on-resistance RDS(on) 5.7m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 80V OptiMOS 3 Power-Transistor IPA057N08N3 G Data Sheet Rev. 2.2 Final Power Management & Multimarket IPA057N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features VDS 80 V Ideal for high frequency switching and sync. rec. RDS(on),max 5.7 mW Optimized technology for DC/DC

pe # ! ! # A03 B53 7 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC D Q H35>5?B=1

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA057N06N3 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING