IPI072N10N3 - описание и поиск аналогов

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPI072N10N3 FEATURES Static drain-source on-resistance RDS(on) 7.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(

$$ " " $ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1 D Q ' 381>>5?B=1

IPP072N10N3 G IPI072N10N3 G OptiMOS 3 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 7.2 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 80 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Id

IPI076N15N5 MOSFET I -PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Q rr) 175 C operating temperature Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC1) for target application 2 3 Ideal for high-frequency switch

IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

$ " " $$ " " TM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1 D R ( 492??6= ?@C>2= =6G6= 7 m D n)m x R I46==6?E 82E6 492C86 I AC@5F4E !) ' D n) 1 D R /6CJ =@H @? C6D DE2?46 D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 92=@86? 7C66 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?49C@?@FD C64E

IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on)max 7.6 mW Excellent gate charge x R product (FOM) DS(on) ID 100 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati

IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1

IPB070N06N G IPP070N06N G IPI070N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@B R 7 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C >?A=1

IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 3 Power-Transistor Product Summary Features V 150 V DS Q ' 381>>5?B=1

IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G OptiMOS 3 Power-Transistor Product Summary Features V 150 V DS N-channel, normal level R 7.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar

isc N-Channel MOSFET Transistor IPI075N15N3 FEATURES Static drain-source on-resistance RDS(on) 7.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )

isc N-Channel MOSFET Transistor IPI076N15N5 FEATURES Static drain-source on-resistance RDS(on) 7.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

isc N-Channel MOSFET Transistor IPI076N12N3 FEATURES Static drain-source on-resistance RDS(on) 7.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM