IPI075N15N3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPI075N15N3
Маркировка: 075N15N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 300 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 70 nC
Время нарастания (tr): 35 ns
Выходная емкость (Cd): 638 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0075 Ohm
Тип корпуса: TO-262
Аналог (замена) для IPI075N15N3
IPI075N15N3 Datasheet (PDF)
ipi075n15n3.pdf
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isc N-Channel MOSFET Transistor IPI075N15N3FEATURESStatic drain-source on-resistance:RDS(on) 7.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONEfficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ipb072n15n3g ipp075n15n3g ipi075n15n3g.pdf
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IPB072N15N3 G IPP075N15N3 GIPI075N15N3 G 3 Power-TransistorProduct SummaryFeaturesV 150 VDSQ ' 381>>5?B=1
ipb072n15n3-g ipp075n15n3-g ipi075n15n3-g.pdf
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IPB072N15N3 G IPP075N15N3 GIPI075N15N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 7.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for tar
ipi076n15n5.pdf
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IPI076N15N5MOSFETI-PAKOptiMOS5 Power-Transistor, 150 VFeatures tab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant1 Qualified according to JEDEC1) for target application23 Ideal for high-frequency switch
ipp070n08n3 ipp070n08n3 ipi070n08n3 ipb067n08n3.pdf
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IPP070N08N3 G IPI070N08N3 GIPB067N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1
ipp072n10n3g ipi072n10n3g.pdf
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ipp076n12n3g ipi076n12n3g.pdf
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ipi076n12n3g ipp076n12n3g.pdf
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IPI076N12N3 G IPP076N12N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 120 V N-channel, normal levelRDS(on)max 7.6 mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati
ipp070n08n3g ipi070n08n3g ipb067n08n3g.pdf
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IPP070N08N3 G IPI070N08N3 GIPB067N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1
ipb070n06ng ipp070n06ng ipi070n06ngrev1.4.pdf
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IPB070N06N G IPP070N06N GIPI070N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1
ipp072n10n3-g ipi072n10n3-g.pdf
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IPP072N10N3 G IPI072N10N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 7.2mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Id
ipi072n10n3.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI072N10N3FEATURESStatic drain-source on-resistance:RDS(on) 7.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(
ipi076n15n5.pdf
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isc N-Channel MOSFET Transistor IPI076N15N5FEATURESStatic drain-source on-resistance:RDS(on) 7.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSY
ipi076n12n3.pdf
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isc N-Channel MOSFET Transistor IPI076N12N3FEATURESStatic drain-source on-resistance:RDS(on) 7.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYM
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