IPI076N12N3 - описание и поиск аналогов

isc N-Channel MOSFET Transistor IPI076N12N3 FEATURES Static drain-source on-resistance RDS(on) 7.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

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IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on)max 7.6 mW Excellent gate charge x R product (FOM) DS(on) ID 100 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati

IPI076N15N5 MOSFET I -PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Q rr) 175 C operating temperature Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC1) for target application 2 3 Ideal for high-frequency switch

isc N-Channel MOSFET Transistor IPI076N15N5 FEATURES Static drain-source on-resistance RDS(on) 7.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY