Справочник MOSFET. IPI100N08N3

 

IPI100N08N3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPI100N08N3
   Маркировка: 100N08N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 26 nC
   trⓘ - Время нарастания: 46 ns
   Cossⓘ - Выходная емкость: 490 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0097 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для IPI100N08N3

 

 

IPI100N08N3 Datasheet (PDF)

 ..1. Size:1010K  infineon
 ipp100n08n3g ipi100n08n3g ipb097n08n3g ipp100n08n3 ipi100n08n3 ipb097n08n3.pdf

IPI100N08N3 IPI100N08N3

IPP100N08N3 G IPI100N08N3 GIPB097N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI 7 DQ H35>5?B=1

 ..2. Size:287K  inchange semiconductor
 ipi100n08n3.pdf

IPI100N08N3 IPI100N08N3

isc N-Channel MOSFET Transistor IPI100N08N3FEATURESStatic drain-source on-resistance:RDS(on) 9.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 5.1. Size:158K  infineon
 ipb100n08s2-07 ipp100n08s2-07 ipi100n08s2-07 ipp100n08s2-07 ipb100n08s2-07 ipi100n08s2-07.pdf

IPI100N08N3 IPI100N08N3

IPB100N08S2-07IPP100N08S2-07, IPI100N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 6.1. Size:159K  infineon
 ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf

IPI100N08N3 IPI100N08N3

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mDS(on),max I 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

 6.2. Size:135K  infineon
 ipb100n04s4-h2 ipi100n04s4-h2 ipp100n04s4-h2.pdf

IPI100N08N3 IPI100N08N3

IPB100N04S4-H2IPI100N04S4-H2, IPP100N04S4-H2OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.4mWDS(on),maxI 100 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType

 6.3. Size:196K  infineon
 ipb100n04s3-03 ipi100n04s3-03 ipp100n04s3-03 ipp100n04s3 ipb100n04s3 ipi100n04s3-03 ds 1 0.pdf

IPI100N08N3 IPI100N08N3

IPB100N04S3-03IPI100N04S3-03, IPP100N04S3-03OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD Version) 2.5mDS(on) I 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(

 6.4. Size:193K  infineon
 ipi100n06s3l-04 ipp100n06s3l-04.pdf

IPI100N08N3 IPI100N08N3

IPB100N06S3L-04IPI100N06S3L-04, IPP100N06S3L-04OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 3.5mDS(on),maxI 100 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Av

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