Справочник MOSFET. IRFSL4510

 

IRFSL4510 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFSL4510

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 140 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 61 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 58 nC

Время нарастания (tr): 32 ns

Выходная емкость (Cd): 220 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0139 Ohm

Тип корпуса: TO-262

Аналог (замена) для IRFSL4510

 

 

IRFSL4510 Datasheet (PDF)

1.1. irfs4510pbf irfsl4510pbf.pdf Size:256K _international_rectifier

IRFSL4510
IRFSL4510

PD - 97771 IRFS4510PbF IRFSL4510PbF HEXFET® Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 11.3mΩ l Uninterruptible Power Supply l High Speed Power Switching G max. 13.9mΩ l Hard Switched and High Frequency Circuits ID (Silicon Limited) 61A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l

1.2. irfsl4510.pdf Size:286K _inchange_semiconductor

IRFSL4510
IRFSL4510

isc N-Channel MOSFET Transistor IRFSL4510 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARA

 4.1. irfs4115pbf irfsl4115pbf.pdf Size:286K _international_rectifier

IRFSL4510
IRFSL4510

PD - 96198A IRFS4115PbF IRFSL4115PbF HEXFET® Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 10.3m l High Speed Power Switching max. 12.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 99A Benefits ID (Package Limited) 195A S l Improved Gate, Avalanche and Dynamic

4.2. irfs4615pbf irfsl4615pbf.pdf Size:365K _international_rectifier

IRFSL4510
IRFSL4510

PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET® Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 34.5m l High Speed Power Switching G max. 42m l Hard Switched and High Frequency Circuits ID 33A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capac

 4.3. auirfsl4115.pdf Size:285K _international_rectifier

IRFSL4510
IRFSL4510

AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET® Power MOSFET Features D VDSS 150V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 10.3mΩ l 175°C Operating Temperature l Fast Switching G max. 12.1mΩ l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant ID 99A l Automotive Qualified * S D Description D Specifically designed for A

4.4. irfb4610pbf irfs4610pbf irfsl4610pbf.pdf Size:399K _international_rectifier

IRFSL4510
IRFSL4510

PD - 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m ID 73A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 4.5. irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf Size:324K _international_rectifier

IRFSL4510
IRFSL4510

PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

4.6. irfs4227pbf irfsl4227pbf.pdf Size:357K _international_rectifier

IRFSL4510
IRFSL4510

PD - 96131A IRFS4227PbF PDP SWITCH IRFSL4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 240 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 22 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 130 A and Pass Switch

4.7. irfs4321pbf irfsl4321pbf.pdf Size:353K _international_rectifier

IRFSL4510
IRFSL4510

PD - 97105C IRFS4321PbF IRFSL4321PbF Applications HEXFET® Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m : l Hard Switched and High Frequency Circuits max. 15m : Benefits 85A c ID l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D Performance D D

4.8. irfs4228pbf irfsl4228pbf.pdf Size:371K _international_rectifier

IRFSL4510
IRFSL4510

PD - 97231A IRFS4228PbF PDP SWITCH IRFSL4228PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100°C 170 A Dissipation in PDP Sustain, Energy TJ max 175 °C Reco

4.9. irfs4620pbf irfsl4620pbf.pdf Size:359K _international_rectifier

IRFSL4510
IRFSL4510

PD -96203 IRFS4620PbF IRFSL4620PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 63.7m l High Speed Power Switching G max. 77.5m l Hard Switched and High Frequency Circuits ID 24A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap

4.10. irfsl4229pbf.pdf Size:275K _international_rectifier

IRFSL4510
IRFSL4510

PD - 96285 IRFSL4229PbF Features Key Parameters l Advanced Process Technology VDS min 250 V l Low QG for Fast Response l High Repetitive Peak Current Capability for VDS (Avalanche) typ. 300 V Reliable Operation RDS(ON) typ. @ 10V m 42 l Short Fall & Rise Times for Fast Switching IRP max @ TC= 100°C 91 A l175°C Operating Junction Temperature for TJ max 175 °C Improved Ru

4.11. irfs4710 irfsl4710.pdf Size:195K _international_rectifier

IRFSL4510
IRFSL4510

PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014Ω 75A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262

4.12. irfs4010pbf irfsl4010pbf.pdf Size:292K _international_rectifier

IRFSL4510
IRFSL4510

PD - 96186A IRFS4010PbF IRFSL4010PbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 3.9m l High Speed Power Switching G max. 4.7m l Hard Switched and High Frequency Circuits ID 180A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Ca

4.13. irfs4410pbf irfsl4410pbf.pdf Size:799K _international_rectifier

IRFSL4510
IRFSL4510

PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m ID S 88A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

4.14. irfb4310pbf irfs4310pbf irfsl4310pbf.pdf Size:376K _international_rectifier

IRFSL4510
IRFSL4510

PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

4.15. irfs4020pbf irfsl4020pbf.pdf Size:331K _international_rectifier

IRFSL4510
IRFSL4510

PD - 97393 IRFS4020PbF DIGITAL AUDIO MOSFET IRFSL4020PbF Features Key Parameters • Key parameters optimized for Class-D audio VDS 200 V amplifier applications mΩ RDS(ON) typ. @ 10V 85 • Low RDSON for improved efficiency Qg typ. 18 nC • Low QG and QSW for better THD and improved Qsw typ. 6.7 nC RG(int) typ. efficiency 3.2 Ω TJ max 175 °C • Low QRR for better

4.16. irfs4127pbf irfsl4127pbf.pdf Size:355K _international_rectifier

IRFSL4510
IRFSL4510

PD - 96177 IRFS4127PbF IRFSL4127PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 18.6m l High Speed Power Switching G max. 22m l Hard Switched and High Frequency Circuits ID 72A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D D l Fully Characterized Capa

4.17. irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf Size:330K _international_rectifier

IRFSL4510
IRFSL4510

IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET® Power MOSFET Applications D VDSS l High Efficiency Synchronous Rectification in SMPS 100V l Uninterruptible Power Supply RDS(on) typ. 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness D l

4.18. irfb4710pbf irfs4710pbf irfsl4710pbf.pdf Size:662K _international_rectifier

IRFSL4510
IRFSL4510

PD- 95146 IRFB4710PbF IRFS4710PbF IRFSL4710PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014Ω 75A Motor Control Uninterrutible Power Supplies Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-2

4.19. irfsl4127.pdf Size:188K _inchange_semiconductor

IRFSL4510
IRFSL4510

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFSL4127 ·FEATURES ·With To-262(I2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

4.20. irfsl4620.pdf Size:224K _inchange_semiconductor

IRFSL4510
IRFSL4510

Isc N-Channel MOSFET Transistor IRFSL4620 ·FEATURES ·With To-262(I2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

4.21. irfsl4310 .pdf Size:286K _inchange_semiconductor

IRFSL4510
IRFSL4510

isc N-Channel MOSFET Transistor IRFSL4310 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

4.22. irfsl41n15d.pdf Size:255K _inchange_semiconductor

IRFSL4510
IRFSL4510

Isc N-Channel MOSFET Transistor IRFS41N15D ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 1

4.23. irfsl4710.pdf Size:233K _inchange_semiconductor

IRFSL4510
IRFSL4510

Isc N-Channel MOSFET Transistor IRFSL4710 ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 10

4.24. irfsl4321.pdf Size:256K _inchange_semiconductor

IRFSL4510
IRFSL4510

Isc N-Channel MOSFET Transistor IRFSL4321 ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 15

4.25. irfsl4410z.pdf Size:261K _inchange_semiconductor

IRFSL4510
IRFSL4510

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFSL4410Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T

4.26. irfsl4227.pdf Size:269K _inchange_semiconductor

IRFSL4510
IRFSL4510

isc N-Channel MOSFET Transistor IRFSL4227 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Vo

4.27. irfsl4310.pdf Size:255K _inchange_semiconductor

IRFSL4510
IRFSL4510

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFSL4310 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T

4.28. irfsl4615.pdf Size:255K _inchange_semiconductor

IRFSL4510
IRFSL4510

Isc N-Channel MOSFET Transistor IRFS4615 ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150

4.29. irfsl4610.pdf Size:286K _inchange_semiconductor

IRFSL4510
IRFSL4510

isc N-Channel MOSFET Transistor IRFSL4610 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARA

4.30. irfsl4115.pdf Size:246K _inchange_semiconductor

IRFSL4510
IRFSL4510

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFSL4115 ·FEATURES ·With TO-262 packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.31. irfsl4410.pdf Size:286K _inchange_semiconductor

IRFSL4510
IRFSL4510

isc N-Channel MOSFET Transistor IRFSL4410 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤10mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAME

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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