TP0610K - описание и поиск аналогов

TP0610K New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (mA) 60 6 @ VGS = 10 V 1 to 3.0 185 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Ease in Driving Switches D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Low On-Resistance 6 D Low Offset (Error

TP0610K Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) VGS(th) (V) ID (mA) Definition TrenchFET Power MOSFET - 60 6 at VGS = - 10 V - 1 to - 3 - 185 High-Side Switching Low On-Resistance 6 Low Threshold - 2 V (typ.) Fast Swtiching Speed 20 ns (typ.) TO-236

TP0610KL/BS250KL New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D ESD Protected 2000 V V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A) APPLICATIONS 6 @ VGS = -10 V -0.27 -60 -1 to 30 60 1 to -3.0 10 @ VGS = -4.5 V -0.21 D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Oper

TP0610K-T1 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) VGS(th) (V) ID (mA) Definition TrenchFET Power MOSFET - 60 3 at VGS = - 10 V - 1 to - 3 -500 High-Side Switching Low On-Resistance 3 Low Threshold - 2 V (typ.) Fast Swtiching Speed 20 ns (typ.) Lo

TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18 TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12 VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18 VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12 BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18 FEATUR

TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features General Description High input impedance and high gain This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s Low power drive requirement well-proven silicon-gate manufacturing process. This Ease of paralleling combination produces a device with the