MMD65R900QRH
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MMD65R900QRH
Маркировка: 65R900Q
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 34.7
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 4.7
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 11.1
nC
trⓘ -
Время нарастания: 24
ns
Cossⓘ - Выходная емкость: 439
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.9
Ohm
Тип корпуса:
TO252
Аналог (замена) для MMD65R900QRH
MMD65R900QRH
Datasheet (PDF)
..1. Size:288K inchange semiconductor
mmd65r900qrh.pdf 
isc N-Channel MOSFET Transistor MMD65R900QRHFEATURESDrain Current : I =75A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =6.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
4.1. Size:2744K 1
mmd65r900q.pdf 
MMD65R900Q Datasheet MMD65R900Q 650V 0.90 N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
8.1. Size:1413K 1
mmd65r600qrh.pdf 
MMD65R600Q Datasheet MMD65R600Q 650V 0.60 N-channel MOSFET Description MMD65R600Q is power MOSFET using MagnaChips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
8.2. Size:1538K magnachip
mmd65r380qrh.pdf 
MMD65R380Q Datasheet MMD65R380Q 650V 0.38 N-channel MOSFET Description MMD65R380Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
8.3. Size:310K inchange semiconductor
mmd65r380qrh.pdf 
isc N-Channel MOSFET Transistor MMD65R380QRHFEATURESDrain Current : I = 10.6A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
8.4. Size:309K inchange semiconductor
mmd65r600qrh.pdf 
isc N-Channel MOSFET Transistor MMD65R600QRHFEATURESDrain Current : I = 7.3A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
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