JCS8N60S - Даташиты. Аналоги. Основные параметры
Наименование производителя: JCS8N60S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 147 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 115 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
Тип корпуса: TO263
Аналог (замена) для JCS8N60S
JCS8N60S Datasheet (PDF)
jcs8n60s jcs8n60b jcs8n60c jcs8n60f.pdf

N RN-CHANNEL MOSFETJCS8N60 Package MAIN CHARACTERISTICS 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V 54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA
jcs8n60vc jcs8n60rc jcs8n60bc jcs8n60sc jcs8n60cc jcs8n60fc.pdf

N RN-CHANNEL MOSFET JCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.6 @Vgs=10VQg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATU
jcs8n60bb jcs8n60sb jcs8n60cb jcs8n60fb.pdf

N RN-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L
jcs8n60f.pdf

N RN-CHANNEL MOSFETJCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.3 @Vgs=10VQg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES
Другие MOSFET... SVF10N65T , STD448S , CRTS084NE6N , HY3210P , HY3210M , HY3210B , HY3210PS , HY3210PM , 50N06 , JCS8N60B , JCS8N60C , JCS8N60F , ME4953 , SI4914DY , SSP60N05 , SSP60N06 , SUV90N06-05 .



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