Справочник MOSFET. R6006JNX

 

R6006JNX MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: R6006JNX

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 43 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 7 V

Максимально допустимый постоянный ток стока (Id): 6 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 15.5 nC

Время нарастания (tr): 14 ns

Выходная емкость (Cd): 25 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.936 Ohm

Тип корпуса: TO220FM

Аналог (замена) для R6006JNX

 

 

R6006JNX Datasheet (PDF)

0.1. r6006jnx.pdf Size:2207K _1

R6006JNX
R6006JNX

R6006JNXDatasheetNch 600V 6A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.936ID6APD43W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa

0.2. r6006jnx.pdf Size:252K _inchange_semiconductor

R6006JNX
R6006JNX

isc N-Channel MOSFET Transistor R6006JNXFEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 7.1. r6006jnd3.pdf Size:1484K _1

R6006JNX
R6006JNX

R6006JND3DatasheetNch 600V 6A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.936ID6APD86W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac

7.2. r6006jnj.pdf Size:2249K _1

R6006JNX
R6006JNX

R6006JNJDatasheetNch 600V 6A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.936ID6APD86W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack

 7.3. r6006jnd3.pdf Size:266K _inchange_semiconductor

R6006JNX
R6006JNX

isc N-Channel MOSFET Transistor R6006JND3FEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

7.4. r6006jnj.pdf Size:255K _inchange_semiconductor

R6006JNX
R6006JNX

isc N-Channel MOSFET Transistor R6006JNJFEATURESDrain Current I =6A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 936m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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