Справочник MOSFET. R6007JNJ

 

R6007JNJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: R6007JNJ

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 96 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 7 V

Максимально допустимый постоянный ток стока (Id): 7 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 17.5 nC

Время нарастания (tr): 15 ns

Выходная емкость (Cd): 30 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.78 Ohm

Тип корпуса: LPT

Аналог (замена) для R6007JNJ

 

 

R6007JNJ Datasheet (PDF)

0.1. r6007jnj.pdf Size:2252K _1

R6007JNJ
R6007JNJ

R6007JNJDatasheetNch 600V 7A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack

0.2. r6007jnj.pdf Size:255K _inchange_semiconductor

R6007JNJ
R6007JNJ

isc N-Channel MOSFET Transistor R6007JNJFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 7.1. r6007jnd3.pdf Size:1482K _1

R6007JNJ
R6007JNJ

R6007JND3DatasheetNch 600V 7A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac

7.2. r6007jnx.pdf Size:2206K _1

R6007JNJ
R6007JNJ

R6007JNXDatasheetNch 600V 7A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.780ID7APD46W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa

 7.3. r6007jnd3.pdf Size:266K _inchange_semiconductor

R6007JNJ
R6007JNJ

isc N-Channel MOSFET Transistor R6007JND3FEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

7.4. r6007jnx.pdf Size:252K _inchange_semiconductor

R6007JNJ
R6007JNJ

isc N-Channel MOSFET Transistor R6007JNXFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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