SSF7N60B - аналоги, параметры транзистора - Справочник транзисторов

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November 2001 SSF7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.4A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast s

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SSF7N60 Features VDSS = 600V Extremely high dv/dt capability ID = 7A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.9 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage N Channel enhancement mode

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SSF7N60F Main Product Characteristics VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

Другие MOSFET... R6006JND3 , R6006JNJ , R6006JNX , R6006KND3 , R6006KNX , R6007JND3 , R6007JNJ , R6007JNX , 4435 , SSI7N60B , SSW7N60B , STE40NA60 , STE36N50A , STE45NK80ZD , STE38NB50 , STE38NB50F , STE24NA100 .