Справочник MOSFET. APT30M36LFLL

 

APT30M36LFLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT30M36LFLL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 568 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 84 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 115 nC
   trⓘ - Время нарастания: 31 ns
   Cossⓘ - Выходная емкость: 1540 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: TO264

 Аналог (замена) для APT30M36LFLL

 

 

APT30M36LFLL Datasheet (PDF)

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 apt30m36b2fll apt30m36lfll.pdf

APT30M36LFLL APT30M36LFLL

APT30M36B2FLLAPT30M36LFLL300V 84A 0.036RFREDFET POWER MOS 7 FREDFETB2FLLPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switchin

 ..2. Size:256K  inchange semiconductor
 apt30m36lfll.pdf

APT30M36LFLL APT30M36LFLL

isc N-Channel MOSFET Transistor APT30M36LFLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.03(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 5.1. Size:72K  apt
 apt30m36lll apt30m36b2ll.pdf

APT30M36LFLL APT30M36LFLL

APT30M36B2LLAPT30M36LLL300V 84A 0.036WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s

 5.2. Size:255K  inchange semiconductor
 apt30m36lll.pdf

APT30M36LFLL APT30M36LFLL

isc N-Channel MOSFET Transistor APT30M36LLLFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.036(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 6.1. Size:168K  apt
 apt30m36jfll.pdf

APT30M36LFLL APT30M36LFLL

APT30M36JFLL300V 76A 0.036R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)"UL Recognized"and Qg. Power MOS 7 combines lower conduction and switching lossesISOTOPalong with e

 6.2. Size:69K  apt
 apt30m36jll.pdf

APT30M36LFLL APT30M36LFLL

APT30M36JLL300V 76A 0.036WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's"

 6.3. Size:69K  apt
 apt30m36b2ll.pdf

APT30M36LFLL APT30M36LFLL

APT30M36B2LLAPT30M36LLL300V 84A 0.036WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s

 6.4. Size:376K  inchange semiconductor
 apt30m36b2fll.pdf

APT30M36LFLL APT30M36LFLL

isc N-Channel MOSFET Transistor APT30M36B2FLLFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.036(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.5. Size:376K  inchange semiconductor
 apt30m36b2ll.pdf

APT30M36LFLL APT30M36LFLL

isc N-Channel MOSFET Transistor APT30M36B2LLFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.036(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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