R6009JNJ - описание и поиск аналогов

R6009JNJ Datasheet Nch 600V 9A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 0.585 ID 9A PD 125W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPac

isc N-Channel MOSFET Transistor R6009JNJ FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

R6009JND3 Datasheet Nch 600V 9A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 0.585 ID 9A PD 125W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPa

R6009JNX Datasheet Nch 600V 9A Power MOSFET lOutline l TO-220FM VDSS 600V RDS(on)(Max.) 0.585 ID 9A PD 53W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPa

isc N-Channel MOSFET Transistor R6009JND3 FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor R6009JNX FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose