R6020KNX - описание и поиск аналогов

R6020KNX Datasheet Nch 600V 20A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.196 TO-220FM ID 20A PD 68W lInner circuit l lFeatures l 1) Low on-resistance 2) Ultra Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tub

isc N-Channel MOSFET Transistor R6020KNX FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

R6020KNZ1 Datasheet Nch 600V 20A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.196 TO-247 ID 20A PD 231W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lA

R6020KNJ Datasheet Nch 600V 20A Power MOSFET lOutline l TO-263S VDSS 600V SC-83 RDS(on)(Max.) 0.196 LPT(S) ID 20A PD 231W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embossed Packin

R6020KNZ Datasheet Nch 600V 20A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.196 TO-3PF ID 20A PD 68W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lApp

R6020KNZ4 Datasheet Nch 600V 20A Power MOSFET lOutline l TO-247 VDSS 600V RDS(on)(Max.) 0.196 ID 20A PD 231W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free lead plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packi

isc N-Channel MOSFET Transistor R6020KNZ1 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor R6020KNJ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6020KNZ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 196m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo