R6504ENJ - Даташиты. Аналоги. Основные параметры

R6504ENJDatasheetNch 650V 4A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 58W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Embo

isc N-Channel MOSFET Transistor R6504ENJFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

R6504ENXDatasheetNch 650V 4A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 40W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bu

isc N-Channel MOSFET Transistor R6504ENXFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

R6504KNJDatasheetNch 650V 4A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 58W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin

R6504KNXDatasheetNch 650V 4A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 40W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

isc N-Channel MOSFET Transistor R6504KNJFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor R6504KNXFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp