Справочник MOSFET. R6504ENX

 

R6504ENX MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: R6504ENX
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 320 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.05 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для R6504ENX

 

 

R6504ENX Datasheet (PDF)

 ..1. Size:1370K  rohm
 r6504enx.pdf

R6504ENX R6504ENX

R6504ENXDatasheetNch 650V 4A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 40W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bu

 ..2. Size:251K  inchange semiconductor
 r6504enx.pdf

R6504ENX R6504ENX

isc N-Channel MOSFET Transistor R6504ENXFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 7.1. Size:1373K  rohm
 r6504enj.pdf

R6504ENX R6504ENX

R6504ENJDatasheetNch 650V 4A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 58W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Embo

 7.2. Size:255K  inchange semiconductor
 r6504enj.pdf

R6504ENX R6504ENX

isc N-Channel MOSFET Transistor R6504ENJFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:1376K  rohm
 r6504knj.pdf

R6504ENX R6504ENX

R6504KNJDatasheetNch 650V 4A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 58W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin

 9.2. Size:1372K  rohm
 r6504knx.pdf

R6504ENX R6504ENX

R6504KNXDatasheetNch 650V 4A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 1.050ID 4.0APD 40W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

 9.3. Size:255K  inchange semiconductor
 r6504knj.pdf

R6504ENX R6504ENX

isc N-Channel MOSFET Transistor R6504KNJFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.4. Size:252K  inchange semiconductor
 r6504knx.pdf

R6504ENX R6504ENX

isc N-Channel MOSFET Transistor R6504KNXFEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.05(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top