R6511KNX - описание и поиск аналогов

R6511KNX Datasheet Nch 650V 11A Power MOSFET lOutline l TO-220FM VDSS 650V RDS(on)(Max.) 0.40 ID 11A PD 53W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS complian lApplication l lPackaging specifications l Switching applic

isc N-Channel MOSFET Transistor R6511KNX FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 400m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

R6511KNJ Datasheet Nch 650V 11A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.40 ID 11A PD 124W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packin

isc N-Channel MOSFET Transistor R6511KNJ FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 400m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

R6511ENX Datasheet Nch 650V 11A Power MOSFET lOutline l TO-220FM VDSS 650V RDS(on)(Max.) 0.4 ID 11A PD 53W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Bulk

R6511ENJ Datasheet Nch 650V 11A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.4 ID 11A PD 124W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Embos

isc N-Channel MOSFET Transistor R6511ENX FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 400m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6511ENJ FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 400m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo