R6520ENZ1
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R6520ENZ1
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 231
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 20
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 61
nC
trⓘ -
Время нарастания: 50
ns
Cossⓘ - Выходная емкость: 1500
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.205
Ohm
Тип корпуса:
TO-247
Аналог (замена) для R6520ENZ1
R6520ENZ1
Datasheet (PDF)
..1. Size:2037K rohm
r6520enz1.pdf 
R6520ENZ1DatasheetNch 650V 20A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.205ID 20APD 231WlFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube Packing code C9 Marking R6520ENZ1 Basic ordering unit (
..2. Size:377K inchange semiconductor
r6520enz1.pdf 
isc N-Channel MOSFET Transistor R6520ENZ1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
6.1. Size:2212K rohm
r6520enz.pdf 
R6520ENZDatasheetNch 650V 20A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.205ID 20APD 68W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube
6.2. Size:265K inchange semiconductor
r6520enz.pdf 
isc N-Channel MOSFET Transistor R6520ENZFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
7.1. Size:1852K rohm
r6520enx.pdf 
R6520ENXDatasheetNch 650V 20A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.205 TO-220FMID20APD 68W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tube*Sw
7.2. Size:1376K rohm
r6520enj.pdf 
R6520ENJDatasheetNch 650V 20A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.205ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emb
7.3. Size:252K inchange semiconductor
r6520enx.pdf 
isc N-Channel MOSFET Transistor R6520ENXFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
7.4. Size:254K inchange semiconductor
r6520enj.pdf 
isc N-Channel MOSFET Transistor R6520ENJFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Другие MOSFET... IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
