Справочник MOSFET. R6524ENJ

 

R6524ENJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: R6524ENJ
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 245 W
   Предельно допустимое напряжение сток-исток |Uds|: 650 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 24 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 70 nC
   Время нарастания (tr): 55 ns
   Выходная емкость (Cd): 1850 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.185 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для R6524ENJ

 

 

R6524ENJ Datasheet (PDF)

 ..1. Size:1377K  rohm
 r6524enj.pdf

R6524ENJ R6524ENJ

R6524ENJDatasheetNch 650V 24A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.185ID 24APD 245W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emb

 ..2. Size:255K  inchange semiconductor
 r6524enj.pdf

R6524ENJ R6524ENJ

isc N-Channel MOSFET Transistor R6524ENJFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. Size:1852K  rohm
 r6524enx.pdf

R6524ENJ R6524ENJ

R6524ENXDatasheetNch 650V 24A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.185 TO-220FMID24APD 74W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tube*Sw

 7.2. Size:2137K  rohm
 r6524enz.pdf

R6524ENJ R6524ENJ

R6524ENZDatasheetNch 650V 24A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.185ID 24APD 74W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube

 7.3. Size:2033K  rohm
 r6524enz1.pdf

R6524ENJ R6524ENJ

R6524ENZ1DatasheetNch 650V 24A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.185ID 24APD 245WlFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube Packing code C9 Marking R6524ENZ1 Basic ordering unit (

 7.4. Size:252K  inchange semiconductor
 r6524enx.pdf

R6524ENJ R6524ENJ

isc N-Channel MOSFET Transistor R6524ENXFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.5. Size:265K  inchange semiconductor
 r6524enz.pdf

R6524ENJ R6524ENJ

isc N-Channel MOSFET Transistor R6524ENZFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.6. Size:377K  inchange semiconductor
 r6524enz1.pdf

R6524ENJ R6524ENJ

isc N-Channel MOSFET Transistor R6524ENZ1FEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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