R6524ENZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R6524ENZ
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 74 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 70 nC
trⓘ - Время нарастания: 55 ns
Cossⓘ - Выходная емкость: 1850 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.185 Ohm
Тип корпуса: TO-3PF
R6524ENZ Datasheet (PDF)
r6524enz.pdf
R6524ENZDatasheetNch 650V 24A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.185ID 24APD 74W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube
r6524enz.pdf
isc N-Channel MOSFET Transistor R6524ENZFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6524enz1.pdf
R6524ENZ1DatasheetNch 650V 24A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.185ID 24APD 245WlFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube Packing code C9 Marking R6524ENZ1 Basic ordering unit (
r6524enz1.pdf
isc N-Channel MOSFET Transistor R6524ENZ1FEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
r6524enx.pdf
R6524ENXDatasheetNch 650V 24A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.185 TO-220FMID24APD 74W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tube*Sw
r6524enj.pdf
R6524ENJDatasheetNch 650V 24A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.185ID 24APD 245W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emb
r6524enx.pdf
isc N-Channel MOSFET Transistor R6524ENXFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6524enj.pdf
isc N-Channel MOSFET Transistor R6524ENJFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 185m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CEB04N6
History: CEB04N6
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918