Справочник MOSFET. R6530KNX1

 

R6530KNX1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: R6530KNX1
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 307 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 56 nC
   trⓘ - Время нарастания: 90 ns
   Cossⓘ - Выходная емкость: 2200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для R6530KNX1

 

 

R6530KNX1 Datasheet (PDF)

 ..1. Size:2376K  rohm
 r6530knx1.pdf

R6530KNX1 R6530KNX1

R6530KNX1DatasheetNch 650V 30A Power MOSFETlOutlinel TO-220ABVDSS 650VRDS(on)(Max.) 0.140ID 30APD 307W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pa

 ..2. Size:262K  inchange semiconductor
 r6530knx1.pdf

R6530KNX1 R6530KNX1

isc N-Channel MOSFET Transistor R6530KNX1FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:1985K  rohm
 r6530knx.pdf

R6530KNX1 R6530KNX1

R6530KNXDatasheetNch 650V 30A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.140 TO-220FMID30APD 86W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub

 6.2. Size:252K  inchange semiconductor
 r6530knx.pdf

R6530KNX1 R6530KNX1

isc N-Channel MOSFET Transistor R6530KNXFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. Size:2344K  rohm
 r6530knz.pdf

R6530KNX1 R6530KNX1

R6530KNZDatasheetNch 650V 30A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.140ID 30APD 86W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packin

 7.2. Size:2341K  rohm
 r6530knz1.pdf

R6530KNX1 R6530KNX1

R6530KNZ1DatasheetNch 650V 30A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.140ID 30APD 305W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Pack

 7.3. Size:266K  inchange semiconductor
 r6530knz.pdf

R6530KNX1 R6530KNX1

isc N-Channel MOSFET Transistor R6530KNZFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.4. Size:304K  inchange semiconductor
 r6530knz1.pdf

R6530KNX1 R6530KNX1

isc N-Channel MOSFET Transistor R6530KNZ1FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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