RD3L050SN - Даташиты. Аналоги. Основные параметры

RD3L050SNDatasheetNch 60V 5A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)109m TO-252ID5.0APD15W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbos

isc N-Channel MOSFET Transistor RD3L050SNFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 109m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

RD3L080SNDatasheetNch 60V 8A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)80m TO-252ID8APD15W lInner circuitllFeaturesl1) Low on - resistance.2) Fast switching speed.3) Drive circuits can be simple.4) Parallel use is easy.5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbo

RD3L08CGNDatasheetNch 60V 80A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)7.0m TO-252ID80APD96W lInner circuitllFeaturesl1) Low on - resistance2) High power small mold package3) Pb-free lead plating ; RoHS compliant4) 100% Rg and UIS tested5) Halogen freelPackaging specificationslEmbossed

isc N-Channel MOSFET Transistor RD3L080SNFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor RD3L08CGNFEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp