Справочник MOSFET. RD3L080SN

 

RD3L080SN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RD3L080SN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9.4 nC
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для RD3L080SN

 

 

RD3L080SN Datasheet (PDF)

 ..1. Size:1596K  rohm
 rd3l080sn.pdf

RD3L080SN RD3L080SN

RD3L080SNDatasheetNch 60V 8A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)80m TO-252ID8APD15W lInner circuitllFeaturesl1) Low on - resistance.2) Fast switching speed.3) Drive circuits can be simple.4) Parallel use is easy.5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbo

 ..2. Size:265K  inchange semiconductor
 rd3l080sn.pdf

RD3L080SN RD3L080SN

isc N-Channel MOSFET Transistor RD3L080SNFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:2764K  rohm
 rd3l08cgn.pdf

RD3L080SN RD3L080SN

RD3L08CGNDatasheetNch 60V 80A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)7.0m TO-252ID80APD96W lInner circuitllFeaturesl1) Low on - resistance2) High power small mold package3) Pb-free lead plating ; RoHS compliant4) 100% Rg and UIS tested5) Halogen freelPackaging specificationslEmbossed

 8.2. Size:266K  inchange semiconductor
 rd3l08cgn.pdf

RD3L080SN RD3L080SN

isc N-Channel MOSFET Transistor RD3L08CGNFEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:1594K  rohm
 rd3l050sn.pdf

RD3L080SN RD3L080SN

RD3L050SNDatasheetNch 60V 5A Power MOSFETlOutlinelVDSS60V DPAKRDS(on)(Max.)109m TO-252ID5.0APD15W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbos

 9.2. Size:265K  inchange semiconductor
 rd3l050sn.pdf

RD3L080SN RD3L080SN

isc N-Channel MOSFET Transistor RD3L050SNFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 109m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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