ASDM3050 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ASDM3050
Маркировка: 3050_3050G
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 60 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 23 nC
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 280 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.011 Ohm
Тип корпуса: TO252
ASDM3050 Datasheet (PDF)
asdm3050.pdf
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ASDM305030V N-CHANNEL MOSFETFeatures Product Summary High density cell design for ultra low RdsonV DS 30 V Fully characterized Avalanche voltage and currentR DS(on),TYP@ VGS=10 V 9 m Good stability and uniformity with high EASR DS(on),TYP@ VGS=4.5 V 11.3 m Excellent package for good heat dissipationI D 50 A Special process technology for high ESD
asdm30p30ctd-r.pdf
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ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-
asdm30p30ctd.pdf
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ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-
asdm30p11td-r.pdf
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ASDM30P11TD-30V P-Channel MOSFETProduct SummaryFeatures Low FOM RDS(on)Qgd 100% avalanche testedV DS -30 V Easy to use/drive RoHS compliantR DS(on),TYP@ VGS=10 V 6.4 mI D -55 AApplication Power Switch Circuit of Adaptor and Charger Battery Protection Charge/Discharge Notebook AC-in Load SwitchPDFN3*3-8Absolute Maximum Ratings TA = 25 u
asdm30n65e-r.pdf
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ASDM30N65E30V N-CHANNEL MOSFETProduct SummaryFeaturel Low Gate Charge VDS 30 Vl Green Device Available4.5 mRDS(on),typ VGS=10Vl Super Low Gate ChargeA65IDl Excellent CdV/dt effect declinel Advanced high cell density Trench technologyApplicationsl Power Management in Desktop Computer or DC/DCConverters.l Isolated DC/DC Converters in Telecom and Industrial.
asdm30n55e-r.pdf
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ASDM30N55E30V N-CHANNEL MOSFETFeatureProduct Summary100% EAS GuaranteedVDS 30 VGreen Device AvailableSuper Low Gate ChargeRDS(on),typ VGS=10V 4.8 mExcellent CdV/dt effect declineA55IDAdvanced high cell density Trench technologyApplication Power Management in Inverter Systemtop viewDFN3.3*3.3-8Maximum ratings, at T A=25 C, unless othe
asdm3080kq.pdf
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ASDM3080KQ30V N-CHANNEL MOSFETProduct SummaryFeatures 30V,80A R =4.8m (Typ.) @ V =10V V DS 30 VDS(ON) GS R =7.5m (Typ.) @ V =4.5VDS(ON) GS Advanced Trench Technology R DS(on),TYP@ VGS=10 V 4.8 m Provide Excellent R and Low Gate ChargeDS(ON)80 AIDApplication Load Switch PWM ApplicationAbsolute Maximum Ratings (T =25 unless othe
asdm30p30ctd.pdf
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ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-
asdm3020.pdf
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ASDM302030V Dual N-Channel MOSFETFeaturesProduct Summary Dual N-Channel,5V Logic Level Control Enhancement modeV 30 V DSS Fast Switching11.5 R mDS(ON)-Max High EffectiveI A D 11.8 Application Power Management in Inverter System Synchronous Rectification top viewASCENDSOP-8NOV 2018 Version1.0 1/7 Ascend Semicondutor Co.,LtdASDM3020
asdm30n65e.pdf
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ASDM30N65E30V N-CHANNEL MOSFETProduct SummaryFeaturel Low Gate Charge VDS 30 Vl Green Device Available4.5 mRDS(on),typ VGS=10Vl Super Low Gate ChargeA65IDl Excellent CdV/dt effect declinel Advanced high cell density Trench technologyApplicationsl Power Management in Desktop Computer or DC/DCConverters.l Isolated DC/DC Converters in Telecom and Industrial.
asdm30n90kq.pdf
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ASDM30N90KQ30V N-Channel MOSFETGeneral Features Product Summary Low Gate Charge Advanced Trench TechnologyVDS 30 V Provide Excellent RDS(ON)RDS(on),Typ.@ VGS=10 V 3.6 m High Power and Current Handling Capability90ID A Application Load Swtich PWM applications Power management1TO-252N-channelAbsolute Maximum Ratings (TA =25C unless o
asdm30p11td.pdf
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ASDM30P11TD-30V P-Channel MOSFETProduct SummaryFeatures Low FOM RDS(on)Qgd 100% avalanche testedV DS -30 V Easy to use/drive RoHS compliantR DS(on),TYP@ VGS=10 V 6.4 mI D -55 AApplication Power Switch Circuit of Adaptor and Charger Battery Protection Charge/Discharge Notebook AC-in Load SwitchPDFN3*3-8Absolute Maximum Ratings TA = 25 u
asdm30n55e.pdf
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ASDM30N55E30V N-CHANNEL MOSFETFeatureProduct Summary100% EAS GuaranteedVDS 30 VGreen Device AvailableSuper Low Gate ChargeRDS(on),typ VGS=10V 4.8 mExcellent CdV/dt effect declineA55IDAdvanced high cell density Trench technologyApplication Power Management in Inverter Systemtop viewDFN3.3*3.3-8Maximum ratings, at T A=25 C, unless othe
asdm30p09zb.pdf
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ASDM30P09ZB-30V P-Channel MOSFETProduct SummaryGeneral Features R
asdm3010s.pdf
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ASDM3010S30V Dual N-Channel MOSFETFeaturesProduct Summary Dual N-Channel,5V Logic Level Control Enhancement modeV DS 30 V Fast Switching High EffectiveR DS(on),TYP@ VGS=10 V 15.5 mApplicationI D 9 A Power Management in Inverter System Synchronous Rectification top viewASCENDSOP-8Maximum ratings, at T j=25 C, unless otherwise specifiedS
asdm3010.pdf
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ASDM301030V Dual N-Channel MOSFETProduct SummaryFeatures Dual N-Channel,5V Logic Level ControlV 30 V DSS Enhancement mode15 R mDS(ON)-Typ Fast Switching High EffectiveI A D 9 Application Power Management in Inverter System Synchronous Rectification top viewASCENDSOP-8Maximum ratings, at T j=25 C, unless otherwise specifiedSymbol
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
![ASDM3050](https://alltransistors.com/images/us.png)
![ASDM3050](https://alltransistors.com/images/es.png)
![ASDM3050](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C