ASDM40N80Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ASDM40N80Q
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 65 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 780 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: DFN5X6-8
Аналог (замена) для ASDM40N80Q
ASDM40N80Q Datasheet (PDF)
asdm40n80q.pdf
ASDM40N80Q40V N-CHANNEL MOSFETFeaturesProduct Summary Low On-ResistanceV 40 V DSS Fast Switching Speed 100% avalanche tested R 3.5 mDS(ON)-Typ@VGS=10V Lead Free and Green DevicesI 80 A DAvailable (RoHS Compliant)Application DC/DC Converters On board power for server Synchronous rectificationtop view DFN5x6-8Absolute Maximum Ratings
asdm40n80q.pdf
ASDM40N80Q40V N-CHANNEL MOSFETFeaturesProduct Summary Low On-ResistanceV 40 V DSS Fast Switching Speed 100% avalanche tested R 3.5 mDS(ON)-Typ@VGS=10V Lead Free and Green DevicesI 80 A DAvailable (RoHS Compliant)Application DC/DC Converters On board power for server Synchronous rectificationtop view DFN5x6-8Absolute Maximum Ratings
asdm40n52e-r.pdf
ASDM40N5240V N-Channel MOSFETGeneral Features Product Summary Low On-ResistanceV 40 VDSS 100% avalanche tested4.2 R mDS(ON)-Typ Fast Switching SpeedI 52 A Excellent package for good heat dissipation DApplication DC/DC ConvertersPin1 On board power for server Synchronous rectificationAbsolute Maximum Ratings (T =25 unless otherwise s
asdm40n52.pdf
ASDM40N5240V N-Channel MOSFETGeneral Features Product Summary Low On-ResistanceV 40 VDSS 100% avalanche tested4.2 R mDS(ON)-Typ Fast Switching SpeedI 52 A Excellent package for good heat dissipation DApplication DC/DC ConvertersPin1 On board power for server Synchronous rectificationAbsolute Maximum Ratings (T =25 unless otherwise s
asdm4410s.pdf
ASDM4410S100V Dual N & P-Channel PowerTrenchFeaturesProduct SummaryN-ChannelV DS 100 VV DS V100 95 95 R DS(on),Typ@ VGS=10 V mR DS(on),Typ@ VGS=10 V m 5 I AI D RDS (ON) = 185m @ VGS = -10VP-ChannelApplicationV DS -100V DC-DC primary bridge 185R DS(on),Typ@ VGS=-10 V m DC-DC Synchronous rectificationI D -4AHot
asdm4406s.pdf
ASDM4406S30V N-Channel MOSFETFeaturesProduct SummaryHigh EfficiencyLow Dense Cell Design30 VVDSAdvanced trench process technology 9RDS(on),typ VGS=10V mimproved dv/dt capability 11.3RDS(on),typ VGS=4.5V mIDReliable and RuggedA 13 ApplicationNetworking, Load SwtichLED lighting top viewASCENDSOP-8Absolute Maximum Ratings at Tj
asdm4614s.pdf
ASDM4614S40V N A ND P-Channel MOSFETFeatures Product SummaryN-Channel High power and current handing capabilityBVDSS ID Lead free product is acquired RDSON.Typ@10V Surface mount package40V 28m 7AP-ChannelApplication PWM applications BVDSS IDRDSON.Typ@10V Load switch-6A-40V 38m Power management top viewASCENDN-channel P-ch
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918