Справочник MOSFET. CRTD030N03L

 

CRTD030N03L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CRTD030N03L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 91 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 143 ns
   Cossⓘ - Выходная емкость: 686 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для CRTD030N03L

   - подбор ⓘ MOSFET транзистора по параметрам

 

CRTD030N03L Datasheet (PDF)

 ..1. Size:563K  crhj
crtd030n03l.pdfpdf_icon

CRTD030N03L

CRTD030N03L() Trench N-MOSFET 30V, 2.3m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 2.3m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

 5.1. Size:560K  crhj
crtd030n04l.pdfpdf_icon

CRTD030N03L

CRTD030N04L() Trench N-MOSFET 40V, 2.5m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 40V Extremely low on-resistance RDS(on) RDS(on) typ. 2.5m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

 9.1. Size:647K  crhj
crtd084ne6n.pdfpdf_icon

CRTD030N03L

CRTD084NE6N() Trench N-MOSFET 65V, 7.1m, 85AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 65V Extremely low on-resistance RDS(on) RDS(on) typ. 7.1m Excellent QgxRDS(on) product(FOM) ID85A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

 9.2. Size:538K  crhj
crtd055n03l.pdfpdf_icon

CRTD030N03L

CRTD055N03L() Trench N-MOSFET 30V, 4.3m, 58AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 4.3m Excellent QgxRDS(on) product(FOM) ID58A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

Другие MOSFET... CRST055N08N , CRSS052N08N , CRST060N10N , CRSS057N10N , CRST065N08N , CRSS063N08N , CRST085N15N , CRSS082N15N , 5N65 , CRTD030N04L , CRTD045N03L , CRTD055N03L , CRTD063N04L , CRTD084NE6N , CRTD105N06L , CRTD110N03L , CRTE120N06L .

History: SWF6N80D | SFP3710G | FDBL9406-F085 | SFP080N100AC2 | SMN03T80IS | IRLU3915 | WSD100N06GDN56

 

 
Back to Top

 


 
.