CRTD030N04L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CRTD030N04L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 116 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 114 nC
Время нарастания (tr): 117 ns
Выходная емкость (Cd): 679 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0033 Ohm
Тип корпуса: TO252
Аналог (замена) для CRTD030N04L
CRTD030N04L Datasheet (PDF)
crtd030n04l.pdf
CRTD030N04L() Trench N-MOSFET 40V, 2.5m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 40V Extremely low on-resistance RDS(on) RDS(on) typ. 2.5m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval
crtd030n03l.pdf
CRTD030N03L() Trench N-MOSFET 30V, 2.3m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 2.3m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval
crtd084ne6n.pdf
CRTD084NE6N() Trench N-MOSFET 65V, 7.1m, 85AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 65V Extremely low on-resistance RDS(on) RDS(on) typ. 7.1m Excellent QgxRDS(on) product(FOM) ID85A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval
crtd055n03l.pdf
CRTD055N03L() Trench N-MOSFET 30V, 4.3m, 58AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 4.3m Excellent QgxRDS(on) product(FOM) ID58A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval
crtd063n04l.pdf
CRTD063N04L() Trench N-MOSFET 40V, 4.5m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 40V Extremely low on-resistance RDS(on) RDS(on) typ. 4.5m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteriaApplications100% DVDS Tested100% DVDS Tested100% DVDS Tested Motor
crtd045n03l.pdf
CRTD045N03LTrench N-MOSFET 30V, 3.1m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 3.1m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteriaApplications100% DVDS Tested100% DVDS Tested100% DVDS Tested Motor control and drive Battery mana
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
